FULL WAFER MAP RESPONSE SURFACE MODELS FOR COMBINATORIAL CHEMICAL VAPOR DEPOSITION REACTOR OPERATIONS

A computational toolbox was developed to perform full wafer response surface modeling of combinatorial chemical vapor deposition wafers. It consists of a library of MATLAB object-oriented functions that are based on accurate quadrature methods. The toolbox was tested using three sets of artificially generated wafers. Once the validity of the toolbox was demonstrated, it was used to model tungsten deposition with a Spatially Programmable CVD reactor. As a result, a model of the form T = b1(sqh2s1) + b2(sqh2s2) + b3(sqh2s3) + b14(sqh2s1)(gap) + b24(sqh2s2)(gap) + b34(sqh2s3)(gap) was considered the most appropriate fit to the data. This model takes into account the systems kinetics (it uses the square root of the hydrogen flow), the gas flows into each one of the reactor segments and the inter-segment gas diffusivity.

Author: Leon, Maria del Pilar

Source: University of Maryland

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Contents

1 Introduction
2 Response Surfaces
Least Squares Method
Analysis of Variance
Adequacy of the Model
Test of Hypothesis Concerning Individual Parameters
Model Comparison
Example
3 Response Surface Model computational toolbox
rsmodel
modelvalidate
modeloutput
getbcoeff
plotb
bttest
comptest
Additional Tools
waferpoint
plotsequence
xmlwrite
urlxmlread
Example
4 Artificially Generated Wafers Study
Single Point Analysis
Full second order behavior
Second order behavior
Third order behavior
Full Wafer Maps
Full second order behavior
Second order behavior
Third order behavior
5 Spatially Programmable CVD Reactor Study
Segments’ Center Point
Full second order model
Other models fitted
ivModel comparison
Full Wafer Maps
Full second order model
Other models fitted
Model comparison
6 Conclusions and Suggestions for Future Work
A Single Point Analysis Results for Segment 2 and Segment 3
Full Second Order Model
Other Models Fitted
Model Comparison
Predictions and Residuals
Bibliography