Characterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulation

Detailed analysis of a 4H-SiC MOSFET has been carried out by numerically solving the steady state semiconductor Drift-Diffusion equations. Mobility models for bulk phonon scattering, surface phonon scattering, surface roughness scattering, Coulomb scattering by interface traps and oxide charges, and high field effects, have been developed and implemented. A first principles Coulomb scattering mobility model has been developed specifically to model the physics of the inversion layer in 4H-SiC MOSFETs…

Author: Potbhare, Siddharth

Source: University of Maryland

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