RF Induced Nonlinear Effects in High-Speed Electronics

Previous experiments and research have indicated rectification of modulated electromagnetic interference can cause upset effects in digital electronics. Although RF rectification has been observed in discrete components, only speculation of the most sensitive mechanisms causing RF rectification has been proposed. Through theoretical analysis, experiments, and simulations, the p-n junctions in ESD protection circuits were determined to be susceptible to rectifying pulse modulated RF signals. Threshold experiments on several logic families of CMOS inverters provided indications to susceptibilities of electronics based on their input ESD protection topology. Parasitic elements…

Contents

CHAPTER 1 INTRODUCTION
1.1. Background
1.2. Motivation for Study
1.3. Organization of Thesis
CHAPTER 2 HIGH SPEED CIRCUIT CHARACTERISTICS
2.1. Introduction
2.2. ESD Protection Device Topologies
2.3. Diode Characteristics
2.3.1. Ideal Diode Equations
2.3.2. Bandwidth Considerations
2.3.3. Capacitance Model
2.4. CMOS Inverter Characteristics
CHAPTER 3 RF INJECTION EXPERIMENTS
3.1. Introduction
3.1.1. Experimental Setup
3.1.2. Loading Effects on the input circuit
3.2. Measured Inverter Port Characteristics
3.3. Observed RF Injection Effects
3.3.1. Threshold Power Level Experiments
3.3.2. RF Gain
3.3.3. Full State Change
3.3.4. Partial State Change and Latent Latching
3.3.5. RF Induced Excited Resonant Frequencies
CHAPTER 4 RF EFFECTS MODELING
4.1. Introduction
4.2. Models derived from measurements
4.3. Simulated Port Characteristics.
4.3.1. Input Impedance and Resonance
4.3.2. Drive Curves
4.4. Simulated RF Injection Effects
4.4.1. Full State Change
4.4.2. Partial State Change and Latent Latching
4.4.3. RF Gain
4.4.4. Relaxation Oscillations
CHAPTER 5 CONCLUSION AND FUTURE WORK
5.1. Conclusion
5.2. Considerations for Future Work
Appendix
BIBLIOGRAPHY

Author: Firestone, Todd M

Source: University of Maryland

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