Characterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulation
Detailed analysis of a 4H-SiC MOSFET has been carried out by numerically solving the steady state semiconductor Drift-Diffusion equations. Mobility models for bulk phonon scattering, surface phonon scattering, surface roughness scattering, Coulomb scattering by interface traps and oxide charges, and high field