silicon carbide

Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. For high-voltagedevices made of SiC thick (> 100 μm), low doped epilayers are needed. Normal growth ...