As the gate oxide thickness of the metal-oxide-semiconductor (MOS) Field Effect Transistor (FET) is continuously scaled down with lateral device dimensions, the gate leakage current during operation increases exponentially. This increase in leakage current raises concerns regarding device reliability. Substitute dielectrics with high dielectric constant (high-k) have been proposed to replace traditional SiO2 to reduce the leakage current in future devices. However, these high-k dielectrics also have reliability issues due to the large amount of intrinsic trapping centers. In this work, electrically active defects…
Author: Heh, Dawei
Source: University of Maryland
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