Thermal and performance modeling of nanoscale mosfets, carbon nanotube devices and integrated circuits

We offer new paradigms for electronic devices and digital integrated circuits (ICs) in an effort to overcome important performance threatening problems such as self heating. To investigate chip heating, we report novel methods for predicting the thermal profiles of complex…

Contents

1 Introduction
1.1 Motivation
1.2 Device Modeling
1.3 Carbon Nanotube Devices
1.4 Integrated Circuit Modeling
1.5 Thesis Overview
2 Device Modeling
2.1 Drift-Diffusion Model
2.1.1 Drift-Diffusion Equations
2.1.2 Discretized Drift-Diffusion Equations
2.2 Quantum Corrected Drift-Diffusion Model .
2.2.1 Solving for the Single Particle Schr¨ondinger Equation
2.2.2 Resolving Quantum Effects Using Density Gradient Formalism
2.3 Heterostructure Corrected Drift-Diffusion Model
2.4 Thermal Effects Included in a Drift-Diffusion Model
2.5 Chapter Summary
3 Carbon Nanotube Modeling
3.1 Energy Dispersion Relations
3.1.1 Monte Carlo for Long Tubes: The Continuum Model
3.1.2 Finite CNT Length: Incorporating Quantization Effects
3.1.3 Phonon Energy Dispersion Relations
3.2 Scattering Rates
3.3 Velocity Curves
3.3.1 Position-Dependent Velocity Oscillations
3.3.2 Length-Dependent Velocity Overshoots
3.3.3 Continuum Model: Velocity Curves
3.4 Mobility Models
3.4.1 Field and Index Dependent CNT Mobility
3.4.2 Field and Diameter Dependent CNT Mobility
3.4.3 Temperature Dependent CNT Mobility
3.4.4 Length Dependent CNT Mobility
3.5 CNT Intrinsic Carrier Concentration
3.6 CNT Electron Affinity
3.7 Chapter Summary
4 Carbon Nanotube Embedded Device Modeling
4.1 QuantumModeling and Proposed Designs of Carbon Nanotube (CNT) Embedded Nanoscale MOSFETs
4.1.1 Quantum CNT-Silicon Device Simulator
4.1.2 Simulation Results
4.1.3 Section Summary
4.2 Device Behavior Modeling for Carbon Nanotube Silicon-On-Insulator MOSFETs
4.2.1 Carbon Nanotube Model
4.2.2 Quantum CNT-SOI-MOSFET Model
4.2.3 Simulation Results
4.3 Chapter Summary
5 Integrated Circuit Modeling: Heating Effects
5.1 Planar Integrated Circuits (ICs): Two-Dimensional (2D)
5.1.1 Device Performance Model
5.1.2 Full-Chip Heating Model
5.1.3 Coupled Device and Full-Chip Heating Model: Methodology
5.1.4 Coupled Device and Full-Chip Heating Model: Application and Results
5.1.5 Section Summary
5.2 Stacked Integrated Circuits (ICs): Three-Dimensional (3D)
5.2.1 Device Performance and 3D IC Modeling
5.2.2 Mixed-Mode Device Performance and 3D IC Heating: Coupled Algorithm
5.2.3 Mixed-mode Device Performance and 3D IC Heating: Appli-cation and Results
5.2.4 Effects of Different Layer Thicknesses on 3D IC Heating
5.2.5 Section Summary
5.3 Methods for Cooling ICs
5.4 Experimental Investigations
5.5 Self-Heating Effects at Cryogenic Temperatures
5.5.1 Device and Chip Model
5.5.2 Simulation Results
5.6 Chapter Summary
6 Thesis Publications
6.1 Journal Publications
6.2 Conference Publications
Bibliography

Reference URL: Visit Now

Reference URL: Visit Now

Author: Akturk, Akin

Source: University of Maryland

Leave a Comment